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SST12LP14C
2.4 GHz High-Power, High-Gain Power Amplifier

The SST12LP14C is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.

The SST12LP14C can be easily configured for high-power applications with good power-added efficiency (PAE) while operating over the 2.4- 2.5 GHz frequency band. It typically provides 32 dB gain with 29% PAE @ POUT = 23 dBm for 802.11g and 29% PAE @ POUT = 23.5 dBm for 802.11b.

This power amplifier has excellent linearity, typically ~4% added EVM at 20 dBm output power. This is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask up to 23 dBm. The SST12LP14C can be configured for applications with an added EVM of ~3%, up to 21 dBm with 19% PAE over the 960-1060 MHz frequency bands. This configuration meets the 802.11g spectrum mask up to 24 dBm with 28% PAE and the 802.11b spectrum mask up to 25 dBm with 31% PAE.

The SST12LP14C also features easy board-level usage along with high-speed power-up/-down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP14C controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make this device ideal for the final stage power amplification in battery-powered 802.11b/g WLAN transmitter applications.

This power amplifier has an excellent on-chip and singleended power detector, which features a wide range (>15 dB) with dB-wise linearization and high stability over temperature (+/-0.5 dB 0°C to +85°C), and over frequency (<+/-0.3 dB across Channels 1 through 14). The on-chip power detector provides a reliable solution to board-level power control.

The SST12LP14C is offered in 16-contact VQFN package.

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