SST12LP14E is a high-efficiency, ultra-compact power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology.

Designed to operate over the 2.4 – 2.5 GHz frequency band, SST12LP14E typically provides 23.5 dB gain with 32% power-added efficiency (PAE) @ POUT = 22 dBm for 802.11g and 30% PAE @ POUT = 21.5 dBm for 802.11b.

This power amplifier has excellent linearity, typically ~3% added EVM at 18 dBm output power, which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask requirements up to 22 dBm. Due to its high efficiency, the device typically consumes only 95 mA total current at 18 dBm output power, with linear 54 Mbps 802.11g modulation. This efficiency is desirable in embedded applications such as in hand-held units.

The SST12LP14E also features easy, board-level usage along with high-speed power-up/-down control through a single combined reference voltage pin. Ultra-low reference current (total IREF ~2 mA) makes the SST12LP14E controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low operating current, make the SST12LP14E ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.

The SST12LP14E has an excellent on-chip, single-ended power detector, which features a >15 dB range good linearity and high stability over temperature (< +/-0.3 dB 0°C to +85°C), frequency (<+/-0.3 dB across Channels 1 through 14), and output load (<+/-0.4 dB with 2:1 output VSWR all phases). The excellent on-chip power detector provides a reliable solution to board-level power control.

The SST12LP14E is offered in an 8-contact XSON package.

For more detailed product information and data sheet, please contact your local sales representatives or sales manager.