SST12LP15A
2.4 GHz High-Power, High-Gain Power Amplifier
The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP15A can be easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT = 25 dBm for 802.11b.
The SST12LP15A has excellent linearity, typically ~4% added EVM at 23 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 25 dBm. This device can be configured for applications with an added EVM of approximately 3.5%, up to 23 dBm over 2.3–2.4 GHz or 2.5–2.6 GHz WiBro/ WiMax frequency bands. SST12LP15A also has widerange (>25 dB), temperature-stable (~1 dB over 85°C), single-ended/differential power detectors which lower users’ cost on power control.
The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total IREF ~2 mA) makes the SST12LP15A controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP15A ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications.
The SST12LP15A is offered in 16-contact VQFN package.