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SST29EE512
512 Kbit (64K x8) Page-Write EEPROM

The SST29EE512 is a 64K x8 CMOS, Page-Write EEPROM manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE512 writes with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE512 conforms to JEDEC standard pin assignments for byte-wide memories.

Featuring high performance Page-Write, the SST29EE512 provides a typical Byte-Write time of 39 µsec. The entire memory, i.e., 64 KByte, can be written page-by-page in as little as 2.5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a Write cycle. To protect against inadvertent write, the SST29EE512 have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST29EE512 is offered with a guaranteed Page-Write endurance of 10,000 cycles. Data retention is rated at greater than 100 years.

The SST29EE512 is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST29EE512 significantly improves performance and reliability, while lowering power consumption. The SST29EE512 improves flexibility while lowering the cost for program, data, and configuration storage applications.

To meet high density, surface mount requirements, the SST29EE512 is offered in 32-lead PLCC and 32-lead TSOP packages. A 600-mil, 32-pin PDIP package is also available. See Figures 1, 2, and 3 for pin assignments.

Application Notes

Protecting Against Unintentional Writes When Using Single Power Supply Flash Memories

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