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- SuperFlash
- SuperFlash Cell
- Three SuperFlash Generations
- ESF2 SuperFlash Cell
ESF2 SuperFlash Cell
To enhance scaling, SuperFlash® cell was innovated with the second generation self-aligned memory technology. While flash macro with up to 8Mb memory density is ideal for the first generation SuperFlash® technology, the smaller cell of the second generation allows system designers to incorporate macro with memory array density higher than 8Mb.
The advancement of the ESF2 cell comes with self-aligning processing steps in forming the floating-gate, source line poly, and WL poly, thus reducing the number of mask required to create the memory cell. The floating-gate element is self-aligned to the formation of active. The source line poly and WL poly are self-aligned to floating-gate poly and dielectric spacers.
The second generation SuperFlash® cell retains the simple operation and array architecture of the first generation technology. It also retains the performance and reliability of the first generation cell. The memory cell can be programmed in less than 1ms and erased in 1ms. The erased cell current is maintained between 35mA and 40mA. The endurance is as high as millions of erase and program cycles and the memory cell completely immunes to SILC.
