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Tech Paper:
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Endurance Testing of EEPROMs
Summary
Endurance is the cumulative number of erase/program
cycles before the device fails a data sheet
parameter. Reprogrammable nonvolatile memories, such
as flash EEPROMs, have a failure rate associated with
endurance that is best represented by the classical
bathtub curve. There are the infant
mortality, useful life, and
wearout regions. When attempting to
describe the endurance of a device, manufacturers
typically claim some number of cycles. In terms of
the classical bathtub curve, this level
is the cumulative number of cycles through the
useful life region where the cumulative
failures are less than a guaranteed value, e.g., 1%
for 10,000 cycles. The number of cycles is supposed
to be less than the value at the knee of the curve
separating the useful life region from
the wearout region. In practice, the
stated level should be significantly less than the
actual value at the onset of wearout. During the
useful life region, there will be a
small, but constant failure rate. The issue facing
manufacturers is to assure each device has been
screened to eliminate infant mortality,
has an endurance value greater than the stated level,
and the failure rate in the useful life
region meets industry standards, reference IEEE Std
1005-1998 Definition and Characterization of
Floating Gate Semiconductor Arrays and JEDEC
Test Method A117 for additional information.
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